Semiconductor device package including a paste member

ABSTRACT

A semiconductor device package is provided. The semiconductor device package includes a package body, a plurality of electrodes, a paste member, and a semiconductor device. The electrodes includes a first electrode disposed on the package body. The paste member is disposed on the first electrode and includes at least one of an inorganic filler and metal powder. The semiconductor device is die-bonded on the paste member.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the benefit under 35 U.S.C. §119 of KoreanPatent Application No. 10-2008-0059069, filed Jun. 23, 2008, which ishereby incorporated by reference in its entirety.

BACKGROUND

The present disclosure relates to a semiconductor device package.

Light emitting diodes (LEDs) may form light emitting sources usingGaAs-based, AlGaAs-based, GaN-based, InGaN-based, and InGaAlP-basedcompound semiconductor materials.

Such LEDs are packaged to be used as light emitting devices that emit avariety of colors. Light emitting diodes are used as light sources indiverse applications, including on/off indicators, text displays, andimage displays, that depict colors.

BRIEF SUMMARY

Embodiments provide a semiconductor device package comprising a pastemember that comprises reflective metal and is disposed between asemiconductor device and an electrode.

Embodiments provide a semiconductor device package comprising asemiconductor device that is die-bonded on a paste member containingreflective metal and/orand/or inorganic fillers.

Embodiments provide a semiconductor device comprising a paste memberthat contains reflective metal and/orand/or inorganic fillers and isdisposed in a paste groove of an electrode; and an LED that isdie-bonded on the paste member.

An embodiment provides a semiconductor device package comprising: apackage body; a plurality of electrodes comprising a first electrode onthe package body; a paste member on the first electrode and comprisingat least one of inorganic fillers and metal powder; and a semiconductordevice die-bonded on the paste member.

An embodiment provides a semiconductor device package comprising: apackage body comprising a cavity; a plurality of electrodes comprising afirst electrode in the cavity; a paste member on the first electrode andcomprising white inorganic fillers and a reflective metal; at least onelight emitting diode chip die-bonded on the paste member; a wireelectrically connecting the electrodes to the light emitting diode chip;and a resin material in the cavity.

An embodiment provides a semiconductor device package comprising: alight emitting diode chip; a first electrode under the light emittingdiode chip; a second electrode spaced apart from the first electrode; anorganic paste member on the first electrode and comprising at least oneof an inorganic filler and a reflective metal, the light emitting diodechip being die-bonded on the organic paste member; and a connectingmember connecting the light emitting diode chip to the electrodes.

The details of one or more embodiments are set forth in the accompanyingdrawings and the description below. Other features will be apparent fromthe description and drawings, and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device packageaccording to a first embodiment.

FIG. 2 is a top plan view of a first electrode on which a semiconductordevice of FIG. 1 is mounted.

FIG. 3 is a cross-sectional view illustrating a heat dissipation path ofa paste member of FIG. 1.

FIG. 4 is a cross-sectional view illustrating a semiconductor devicepackage according to a second embodiment.

FIG. 5 is a cross-sectional view illustrating a semiconductor devicepackage according to a third embodiment.

FIG. 6 is a perspective view illustrating a semiconductor device packageaccording to a fourth embodiment.

FIG. 7 is a side sectional view of FIG. 6.

FIG. 8 is a cross-sectional view illustrating a semiconductor devicepackage according to a fifth embodiment.

FIG. 9 is a cross-sectional view illustrating a semiconductor devicepackage according to a sixth embodiment.

DETAILED DESCRIPTION

Reference will now be made in detail to the embodiments of the presentdisclosure, examples of which are illustrated in the accompanyingdrawings.

FIG. 1 is a cross-sectional view of a semiconductor device packageaccording to a first embodiment, FIG. 2 is a top plan view of a firstelectrode on which a semiconductor device of FIG. 1 is mounted, and FIG.3 is a cross-sectional view illustrating a heat dissipation path of apaste member of FIG. 1.

Referring to FIG. 1, a semiconductor device package 100 comprises apackage body 110, a semiconductor device 120, a resin material 125, aplurality of electrodes 132 and 134, and a paste member 140.

The package body 110 may be formed of a material selected from the groupconsisting of polyphthalamide (PPA), liquid crystal polymer, resin-basedmaterial (e.g., syndiotactic polystyrene (SPS), a metal core printedcircuit board (MCPCB), a printed circuit board (PCB), a ceramic PCB,rame retardant-4 (FR-4), and aluminum nitride (AlN). The package body110 may be provided in the form of a chip-on-board (COB).

A cavity 115 having an opened top is formed at an upper portion 112 ofthe package body 110 and an inner wall of the cavity 115 may be formedto be vertical or inclined at a predetermined angle with respective to abottom surface thereof.

The cavity 115 may be formed in a circular or polygonal shape and in asingle layer cavity structure or a multi-layer cavity structure.However, the present disclosure is not limited to these configurations.

The electrodes 132 and 134 are formed in the cavity 115 of the packagebody 110. First ends of the electrodes 132 and 134 are disposed in thecavity 115 and second ends of the electrodes 132 and 134 are exposed toan external side of the package body 110. The second ends of theelectrodes 132 and 134 may be used as external electrodes P1 and P2. Thesecond ends of the electrodes 132 and 134 extend to a side or bottomsurface of the package body 110. However, the present disclosure is notlimited to this configuration. The electrodes 132 and 134 may be formedby selectively using a lead frame type, a PCB (printed circuit board)type, a ceramic type, a plating type, or a via-hole type.

The electrode 132 is provided at a first region with a paste groove 136having a predetermined depth. The paste groove 136 may be formed througha punching process or an etching process. The paste groove 136 may beformed on the electrode 132 before or after the package body 110 ismanufactured.

The paste groove 136 may be formed on the electrode 132 on which thesemiconductor device 120 is attached. The following will be describedwith an example where the paste groove 136 is formed on the firstelectrode 132.

The paste groove 136 may be formed on a region where the semiconductordevice 120 is die-bonded. The paste groove 136 may be formed in acircular shape, a polygonal shape, or a random shape. A depth of thepaste groove 136 can be 1-100 μm from a top surface of the electrode132.

In addition, the paste member 140 is formed in the paste groove 136. Thepaste member 140 may be formed through at least one of dotting,stamping, and dispensing processes.

The paste member 140 may be formed of an organic paste materialcontaining a reflective metal. The paste member 140 may be formed bymixing an organic resin with an inorganic fillers and/or and/or areflective metal at a predetermined ratio.

The organic resin contains silicon or epoxy resin. The inorganic fillerscontain high reflective white inorganic fillers or reflective inorganicfillers such as TiO₂. The reflective metal may contain metal powder suchas Ag and Al that are excellent in a reflective property and thermalconduction.

The paste member 140 may be formed of the organic resin mixed with0.1-30 wt % of the inorganic fillers and/or 0.1-30 wt % of the metalpowder.

The paste member 140 has a higher thermal conduction and reflectiveproperty than resin material such as epoxy, and has an equal insulationproperty as the epoxy. The bottom and outer circumference of the pastemember 140 may surface-contact the first electrode 132.

The semiconductor device 120 is die-bonded on the paste member 140. Thesemiconductor device 120 comprises, for example, an LED chip. The LEDchip may be a colored LED chip such as a red LED chip, a green LED chip,or a blue LED chip or an ultraviolet LED chip. The package with the LEDchip may be referred to as an LED package. In addition, thesemiconductor device 120 may comprise a protective device such as aZener diode.

The paste member 140 may be designed such that at least onesemiconductor device 120 may be die-bonded. The number of thesemiconductor device 120 may be varied in accordance with the size ofthe paste groove 136.

Referring to FIG. 2, the paste member 140 has a first width D1 greaterthan a first width D2 of the semiconductor device 120. That is, an areaof the paste member 140 may be greater than a bottom area of thesemiconductor device 120.

Referring again to FIGS. 1 and 2, the semiconductor device 120 isconnected to the electrodes 132 and 134 by wires 122 and 124.

The resin material 125 is formed in the cavity 115. The resin material125 comprises transparent silicon or epoxy resin. Phosphors may be addedto the resin material 125. A lens (not shown) formed in a predeterminedshape may be attached or formed on the resin material 125.

The package body 110 may comprise a protective device (not shown) suchas a Zener diode for protecting the semiconductor device 120.

Referring to FIGS. 1 and 3, electric power is supplied to thesemiconductor device package 100 through the electrodes 132 and 134. Theelectrode 132 supplies a first polarity power to the semiconductordevice 120 and the second electrode 134 supplies second polarity powerto the semiconductor device 120. When the semiconductor device 120 isthe LED chip, the semiconductor device 120 emits light in alldirections. In this case, the semiconductor device 120 generates heat.Some of the heat generated is conducted to the paste member 140 disposedunder the semiconductor device 120 and the heat conducted to the pastemember 140 is dissipated through the first electrode 132.

Here, the paste member 140 surface-contacts the paste groove 136 of thefirst electrode 132 to dissipate the heat conducted from thesemiconductor device 120 through the first electrode 132.

In addition, the paste member 140 is formed in the paste groove 136 ofthe first electrode 132 and disposed under the semiconductor device 120.Therefore, the contact area of the paste member 140 with the resinmaterial 125 is reduced. Here, the paste member 140 may protrude abovethe first electrode 132.

Further, since the paste member 140 has a higher thermal conductionefficiency compared to the resin material, it can reduce a boundarysurface temperature with the semiconductor device 120. Accordingly, theyellowing problem of the resin material 125 by the heat can beinhibited.

Since the paste member 140 contains the reflective metal, it can reflectsome of the light emitted from the semiconductor device 120 or vary acritical angle of the light. Accordingly, an amount of the lightreflected on the light emitting diode package can be improved.

FIG. 4 is a cross-sectional view illustrating a semiconductor devicepackage according to a second embodiment. Parts that are alreadydescribed in the first embodiment will not be described in this secondembodiment.

Referring to FIG. 4, a semiconductor device package of this secondembodiment comprises a first electrode 132 on which paste grooves 136Aformed in a protrusion/groove structures are formed.

A paste member 140 is formed in the paste groove 136A. A contact area ofthe paste member 140 with the first electrode 132 can be increased bythe protrusion/groove structures. Therefore, the heat generated by thesemiconductor device 120 can be effectively dissipated and vary acritical angle of the light emitted from the LED chip or reflect orrefract the light.

FIG. 5 is a cross-sectional view illustrating a semiconductor devicepackage according to a third embodiment. Parts that are alreadydescribed in the first embodiment will not be described in this thirdembodiment.

Referring to FIG. 5, a semiconductor device package 100A comprises amulti-layered cavity 115A and a paste member 140A formed on a topsurface of a first electrode 133. First and second electrodes 133 and135 are disposed on the cavity 115A. A first end 133A of the firstelectrode 133 is disposed on a lower-layer bottom surface of the cavity115A and a semiconductor device 120 is die-bonded on the first end 133Aof the first electrode 133.

The semiconductor device 120 is die-bonded by the paste member 140Aformed on the top surface of the first electrode 133. The paste member140A is formed on the top surface of the first end 133A of the firstelectrode 133. In this case, the heat dissipation efficiency can beimproved in accordance with an area of the paste member 140A. Thedescription of the paste member 140A will refer to the first embodiment.

A first end 135B of the second electrode 135 and a middle end 133B ofthe first electrode 133 are obliquely disposed at a lower layer of thecavity 115A to improve the light reflection.

A second end 133C of the first electrode 133 and a second end 135C ofthe second electrode 135 are exposed through middle and top ends of thecavity 115A.

A transparent resin material 125 is formed in the cavity 115A. Phosphorsmay be added to the resin material 125. The resin material 125 may beprovided at the lower cavity structure with a phosphor layer. Atransparent resin layer may be formed in the cavity structure. However,the present disclosure is not limited to this.

Here, a plurality of wires 122 and 124 have first ends connected to thesemiconductor device 120 and second ends connected to a second end 133Cof the first electrode 133 and a second end 135C of the second electrode135. Accordingly, a heat dissipation path of the semiconductor device120 may be dispersed.

The paste member 140A comprises a reflective metal and inorganic fillersand thus the heat generated by the semiconductor device 120 can bedissipated through the first electrode 132.

FIG. 6 is a perspective view illustrating a semiconductor device packageaccording to a fourth embodiment and FIG. 7 is a side sectional view ofFIG. 6. Parts that are already described in the first embodiment willnot be described in this fourth embodiment.

Referring to FIGS. 6 and 7, a semiconductor device package 200 comprisesa package body 210, a cavity 215, a plurality of electrodes 232 and 234,a paste member 240, a semiconductor device 220, and a resin material225.

The package body 210 is a silicon-based wafer level package (WLP) formedin a polyhedron shape.

A cavity 215 having a predetermined depth may be formed in an upperportion of the package body 210. A perimeter of the package body 210 maybe inclined. However, the present disclosure is not limited to this.

The electrodes 232 and 234 may be formed on a surface of the packagebody 210. For instance, the electrodes 232 and 234 may be formed on atop surface (comprising a cavity region), side surface, and rear surfaceof the package body 210.

The electrodes 232 and 234 may be formed in a plating type and/or and/ora via-hole type. A reflective material may be coated on a top surface ofthe electrodes 232 and 234. Here, an insulating layer (not shown) may beformed between the package body 210 and the electrodes 232 and 234.However, the present disclosure is not limited to this.

First ends of the electrodes 232 and 234 are disposed in the cavity 215and spaced apart from each other.

The electrode 232 is provided with a paste groove 236. The paste groove236 may be formed with a predetermined depth by dry-etching orwet-etching of the electrode 232. The paste groove 236 may be formed ina circular shape, a polygonal shape, or a random shape.

A size of the paste groove 236 may be equal to or greater than a bottomsurface of the semiconductor device 220. The semiconductor device 220may be at least one LED chip.

The depth of the paste groove 236 may be 1-100 μm from the top surfaceof the electrode 232.

A paste member 240 is formed in the paste groove 236. The paste member240 may be formed through one of a dotting process, a stamping process,and a dispensing process.

The paste member 240 may be formed of an organic paste material to whichmetal powder is added. The paste member 240 may be formed of organicresin to which inorganic fillers and/or metal powder is added at apredetermined ratio.

The organic resin contains silicon or epoxy resin. The inorganic fillercontains high reflective white inorganic fillers such as TiO₂. Thereflective metal may contain metal powder such as Ag and Al that areexcellent in a reflective property and thermal conduction. The pastemember 140 may be formed of the organic resin mixed with 0.1-30 wt % ofthe inorganic fillers and/or 0.1-30 wt % of the metal powder.

The paste member 240 is applied on the paste groove 236 and thesemiconductor device 220 is die-bonded on the paste member 240. Thesemiconductor device 220 is connected to the electrodes 232 and 234 bywires 222 and 224.

Heat generated by the semiconductor device 220 is conducted to theelectrode 232 by the paste member 240. Therefore, a junction temperaturebetween the semiconductor device 220 and the paste member 240 can bereduced.

Here, the shape, size, and number of the paste member 240 in the cavity215 may be varied in accordance with the shape, size, and number of thesemiconductor device 220. For example, when a plurality of thesemiconductor devices 220 are provided, the paste member 240 may beformed in a large size or a plurality of the paste members 240 may beprovided.

The resin material 225 is formed in the cavity 215. The resin material225 comprises transparent silicon or epoxy. Phosphors may be added tothe resin material 225. A lens (not shown) for refracting light in apredetermined direction may be disposed on the resin material 225.

Further, a protective device such as a Zener diode for protecting thesemiconductor device (i.e., LED) 220 may be provided on the package body210.

When electric power is applied from the electrodes 232 and 234, thesemiconductor device 220 is driven to generate heat. The heat generatedby the semiconductor device 220 is conducted to the electrode 232through the paste member 240 and then dissipated. Further, when thesemiconductor device 220 is an LED chip, the light emitted from the LEDchip is partly reflected or refracted by the paste member 240.

The heat generated by the semiconductor device 220 is conducted to theelectrode 232 through the paste member 240 and then dissipated.Therefore, the yellowing problem of the resin material 225 contactingthe semiconductor device 220 can be solved. Further, a contact area ofthe paste member 240 with the resin material 225 is reduced and acontact area of the paste member 240 with the electrode 132 isincreased. Therefore, the heat dissipation efficiency of the pastemember 240 can be enhanced.

FIG. 8 is a cross-sectional view illustrating a semiconductor devicepackage according to a fifth embodiment. Parts that are alreadydescribed in the first embodiment will not be described in this fifthembodiment.

Referring to FIG. 8, a semiconductor package 300 comprises a packagebody 310, a semiconductor device 320, a plurality of electrodes 332 and334, wires 322 and 324, a resin material 325, and a paste member 340.

The electrodes 332 and 334 are formed on the package body 310. Theelectrodes 332 and 334 may be formed by selectively using a lead frametype, a PCB type, a ceramic type, a plating type, or a via-hole type.

The electrode 332 may extend to one side of the top surface of thepackage body 310, a left side surface of the package body 310, and arear surface of the package body 310. The second electrode 334 mayextend to the other side of the top surface of the package body 310, aright side surface and rear surface of the package body 310. A rearelectrode of the package body 310 may be used as external electrodes P5and P6.

A paste groove 336 is formed on a top surface of the first electrode 332and the paste member 340 is formed in the paste groove 336. The pastemember 340 may be mixed with metal powder and/or a white inorganicfillers. The paste member 340 corresponds to the paste member 140 of thefirst embodiment.

At least one semiconductor device 320 is die-bonded on the paste member340. The semiconductor device 320 may be an LED chip and electricallyconnected to the electrodes 332 and 334 by the wires 322 and 324.

The resin material 325 may be formed in a lens shape using silicon orepoxy resin. The resin material 325 seals the semiconductor device 320and the wires 322 and 324. The resin material 325 can refract the lightemitted from the LED chip in a predetermined direction.

When the semiconductor device 320 is driven, a portion of the heatgenerated by the semiconductor device 320 is conducted to the electrode332 through the paste member 340 and is then dissipated. Here, avia-hole (not shown) may be formed through the electrode 332 and extendto a bottom surface of the package body 310. The via-hole functions todissipate the heat through a lower portion of the package body 310.

FIG. 9 is a cross-sectional view illustrating a semiconductor devicepackage according to a sixth embodiment. Parts that are alreadydescribed in the first embodiment will not be described in this sixthembodiment.

Referring to FIG. 9, a semiconductor package 300A comprises a packagebody 310, a paste member 340A, a semiconductor device 320A, a pluralityof electrodes 332 and 334, a paste groove 336A, and a resin material325.

The paste groove 336A is formed in the electrode 332 of the package body310. The paste groove 336A may be formed in a plurality of stripeshapes, ring shapes, or donut shapes.

The paste member 340A is formed in the paste groove 336A. A portion ofthe electrode 332 is exposed in the paste groove 336A and a conductiveadhesive may be applied on a portion of the electrode 332. Thesemiconductor device 320A may be die-bonded on the paste member 340A bythe conductive adhesive. That is, both organic paste member andconductive paste member may be used as the die paste member.

When the semiconductor device 320A is a large-sized LED chip, a bottomelectrode of the LED chip is electrically connected to the electrode 332and also connected to the electrode 334 by a wire 324. Here, the bottomelectrode of the LED chip may be an N-type or P-type electrode.

According to the embodiment, when the semiconductor device such as theLED chip is packaged, the heat generated by the semiconductor device canbe effectively dissipated by the thermal conductive paste member. Inaddition, the light emitted from the LED chip can be reflected by thepaste member containing the metal powder. The semiconductor devicepackage using the LED chip may be used as a light source of a frontlight and/or backlight of a liquid crystal display device and aslightings.

Embodiments provide a semiconductor device package.

Embodiments provide an LED package.

Embodiments also provide an LED package that can be used as a lightsource for a variety of fields such as lighting displays, letterdisplays and image displays.

According to the embodiments, heat dissipation of a semiconductor devicesuch as an LED chip can be improved by a paste member containingreflective metal.

In addition, since light emitted from an LED chip can be reflected bythe paste member containing a reflective metal and/or inorganic fillers,the amount of light reflected can be increased.

Further, a yellowing problem of resin material can be solved by reducinga contact area between the paste member and the resin material.

In addition, the reliability of a semiconductor device package on whichan LED chip and/or a protective member are mounted can be improved.

In the above description, it will be understood that when a layer (orfilm) is referred to as being ‘on’ another layer or substrate, it can bedirectly on the another layer or substrate, or intervening layers mayalso be present. Further, it will be understood that when a layer isreferred to as being ‘under’ another layer, it can be directly under theanother layer, or one or more intervening layers may also be present. Inaddition, it will also be understood that when a layer is referred to asbeing ‘between’ two layers, it can be the only layer between the twolayers, or one or more intervening layers may also be present.

Although embodiments have been described with reference to a number ofillustrative embodiments thereof, it should be understood that numerousother modifications and embodiments can be devised by those skilled inthe art that will fall within the spirit and scope of the principles ofthis disclosure. More particularly, various variations and modificationsare possible in the component parts and/or arrangements of the subjectcombination arrangement within the scope of the disclosure, the drawingsand the appended claims. In addition to variations and modifications inthe component parts and/or arrangements, alternative uses will also beapparent to those skilled in the art.

1. A semiconductor device package comprising: a package body; aplurality of electrodes comprising a first electrode on the packagebody; a paste member on the first electrode and comprising at least oneof inorganic fillers and metal powder; and a semiconductor devicedie-bonded on the paste member, wherein a die-bonding region of thefirst electrode comprises a paste groove having a predetermined depthand the paste member is formed in the paste groove, and wherein thepaste member is organic resin comprising the inorganic fillers and themetal powder.
 2. The semiconductor device package according to claim 1,wherein the inorganic fillers comprise TiO₂ and the metal powdercomprises at least one of aluminum (Al) and silver (Ag).
 3. Thesemiconductor device package according to claim 1, wherein thesemiconductor device comprises at least one light emitting diode chip.4. The semiconductor device package according to claim 3, furthercomprising: a cavity disposed at the package body for accommodating theelectrodes and the light emitting diode chip; a wire electricallyconnecting the light emitting diode chip to the electrodes; and atransparent resin material in the cavity.
 5. The semiconductor devicepackage according to claim 1, further comprising a resin material forsealing the electrodes and the semiconductor device.
 6. Thesemiconductor device package according to claim 1, wherein a bottomsurface and an outer circumference of the paste member make contact withthe first electrode.
 7. A semiconductor device package comprising: apackage body comprising a cavity; a plurality of electrodes comprising afirst electrode in the cavity; a paste member on the first electrode andcomprising white inorganic fillers and a reflective metal; at least onelight emitting diode chip die-bonded on the paste member; a wireelectrically connecting the electrodes to the light emitting diode chip;and a resin material in the cavity.
 8. The semiconductor device packageaccording to claim 7, wherein the first electrode comprises a pastegroove in which the paste member is disposed.
 9. The semiconductordevice package according to claim 8, wherein the paste groove has adepth of about 1 μm to about 100 μm from a top surface of the firstelectrode.
 10. The semiconductor device package according to claim 9,wherein the paste groove is larger than a bottom area of the lightemitting diode chip and comprises protrusion/groove structures.
 11. Thesemiconductor device package according to claim 8, wherein the pastegroove is formed in one of a plurality of stripe shapes, a ring shape,and a circular shape.
 12. The semiconductor device package according toclaim 7, wherein the electrodes comprise at least one of a lead frametype electrode, a circuit board type electrode, a ceramic typeelectrode, a plating type electrode, and a via-hole type electrode; andthe package body comprises at least one of polyphthalamide (PPA), aliquid crystal polymer, a resin comprising syndiotactic polystyrene, ametal core printed circuit board (MCPCB), a printed circuit board (PCB),a ceramic PCB, flame retardant 4 (FR-4), and aluminum nitride (AlN). 13.The semiconductor device package according to claim 7, wherein the pastemember comprises silicon or epoxy; the white inorganic fillers comprisesTiO₂; the reflective metal comprises at least one of aluminum (Al) andsilver (Ag); and at least one of the white inorganic fillers and thereflective metal is mixed in the paste member at a concentration ofabout 0.1% to about 30% by weight.
 14. A semiconductor device packagecomprising: a light emitting diode chip; a first electrode under thelight emitting diode chip; a second electrode spaced apart from thefirst electrode; an organic paste member on the first electrode andcomprising inorganic fillers and a reflective metal comprising metalpowder, the light emitting diode chip being die-bonded on the organicpaste member; and a connecting member electrically connecting the lightemitting diode chip to the electrodes, wherein the first electrodecomprises at least one paste groove in which the paste member isdisposed.
 15. The semiconductor device package according to claim 14,further comprising a package body under the first and second electrodes;and a single or multi-layered cavity on the package body, the lightemitting diode chip being disposed in the cavity.
 16. The semiconductordevice package according to claim 15, further comprising a transparentresin material or a fluorescent material containing transparent resinmaterial in the cavity.
 17. The semiconductor device package accordingto claim 14, wherein the paste member is an organic resin material,wherein the inorganic fillers comprise TiO₂, and wherein the metalpowder comprises at least one of Al and Ag.